国家/地区 韩国（3）
IPC部 H（3） C（2）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC
发明人 HAN M（3）
公开年
申请年
专利权人 UNIV CHONBUK.（3）

Producing hexagonal boron nitride thin film useful for photoelectric device, light-emitting and light-receiving device, comprises forming hexagonal boron nitride thin film on graphene oxide layer by supplying e.g. boron-containing precursor.

KO K B, YOO B, HAN M, TRANVEITCUONG, HONG C

LED comprises conductive layer which is formed at lower portion of n-layer and is connected to N-electrode and is reduced with graphene oxide.

RYU B D, HAN M, HAN N, HONG C H

Light emitting device has gallium nitride layer and graphene pattern that are formed on substrate and graphene layer that is formed between gallium nitride layer and substrate.

HONG C H, HAN N, HAN M, RYU B D, KANG J H