国家/地区 日本（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L029/786（3） H01L051/05（2） H01L051/30（2）
发明人 HARADA N（3）
公开年 2009（2）
申请年 2008（3）
专利权人 FUJITSU LTD（3）

Bipolar FET e.g. e.g. bipolar graphene channel FET used in semiconductor integrated circuit device e.g. common-source circuit, has voltage application device which changes polarity of transistor, from direction of gate electrode.

HARADA N

Semiconductor device e.g. transistor has channel formed of bi-layer graphene film.

HARADA N, OFUCHI M

Graphene transistor e.g. graphene FET for electronic device, has carbon film whose width of side near source electrode of channel region is wider than width of carbon film of side near drain electrode of channel region.

HARADA N