国家/地区 美国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L029/16（3） H01L029/66（3） H01L029/778（2）
H01L029/78（2） H01L029/786（2）
发明人 HEO J（3）
公开年 2015（3）
申请年 2014（2） 
专利权人 SAMSUNG ELEC.（3）

Method for fabricating field effect transistor, involves filling slit with potential barrier material is provided to induce Fowler-Nordheim tunneling through graphene channel layer when gate voltage is applied to gate electrode.

LEE J, PARK S, BYUN K, SEO D, SONG H, SHIN H, CHUNG H, HEO J

Inverter e.g. vertical-type inverter, has second transistor that includes second channel unit including second graphene layer and n-type second two-dimensional (2D) semiconductor layer contacting second graphene layer.

HEO J, PARK S, SHIN H, HEO J S, PARK S J, SHIN H J

Method for fabricating graphene electronic device i.e. FET, of radio frequency device, involves exposing graphene layer in channel formation region by wet etching metal protection layer and metal layer using photoresist pattern.

HEO J, CHUNG H, SEO S, LEE S, YANG H