国家/地区 中国（7）
IPC部 H（4） G（2）
IPC大类 H01（4）
IPC小类 H01L（2）
IPC H01L033/00（2）
发明人 HU J（7）
公开年 2023（7）
申请年 2023（7）
专利权人 JIANGXI MTC .（2）

Distributed radiating structure for flat computer main board, has graphene film connected with soaking plate, where end of soaking plate far away from main plate main body is connected with radiating fin.

LIU X, HU J, HUANG Z, YU G, LUO X, WAN H, YIN X, ZENG H

High-strength power transmission line aluminum alloy composite material of transmission line, comprises silicon, iron, copper, magnesium, boron, graphene, and aluminum.

AI J, HE Z, WU Z, SU Y, HU J, WU W, LAN T, KANG X, LIN Y, CHEN X

Flexible strain sensor used in wear-resistant electronic device comprises core layer elastic yarn, middle layer conductive material and outer layer packaging material.

YANG X, YAN X, MENG F, HUANG F, HU J

Preparing modified wood loaded with leaf-shaped graphene layer for e.g. photocatalysis, involves processing natural wood, placing in alkali solution, heating, soaking pre-processed wood in metal salt solution, processing metal ion modified wood with graphene oxide aqueous solution and freeze-drying.

LI X, BAI Y, LIAO Y, LIU Y, XU L, CHANG S, LIU G, YU C, HU J

Preparing anode active material for high power and high specific energy battery type capacitor, comprises preparing heteroatom-doped graphene oxide, adding deionized water, hydrothermally reacting, mixing heteroatom-doped graphene compound with activated carbon and lithium cobaltate, and stirring.

LIU J, CHEN X, LIU F, TIAN H, HU H, TIAN W, LUO F, TANG Y, HU J, DIAO S, SU J, BAN X, CHEN A, LI Y, ZHOU X

Preparing epitaxial wafer used in LED chip, involves providing substrate, growing aluminum nitride layer on substrate sequentially buffer layer, and introducing hydrogen and nitrogen to perform surface treatment to layer before growing buffer layer.

GU W, JIN C, HU J, LV M, LIU C

Silicon-based UV-LED epitaxial structure, comprises buffer layer provided with silicon dioxide layer, silicon nitride layer, graphene layer, and aluminum nitroxide layer that are sequentially arranged on silicon substrate.

JIN C, HU J, LIU C, GAO H, ZHENG W, CHENG L