国家/地区 中国（4）
IPC部 C（3）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人 JIN L（4）
公开年 2014（4）
申请年 2014（4） 
专利权人 WUXI GEFEI E.（2）

Epitaxial growth of graphene at sapphire and epitaxial metal interface, comprises processing sapphire wafer substrate, plating substrate on metal catalyst, placing in vapor deposition furnace and growing graphene by introducing carbon gas.

LIAO W, JIN L, JIANG J

Preparing controlled growth of graphene layers using organometallic compounds comprises cleaning the copper substrate, placing in chemical vapor deposition tube furnace chamber, passing protective gas, heating, and rapidly cooling.

LIAO W, JIN L, JIANG J

Quantum point/graphene photosensitive FET, has source electrode and drain electrode that are fixedly connected with leading-out electric conduction line, and quantum point layer formed with graphene layer in channel position.

WANG M, ZHANG Y, SONG X, WANG H, JIN L

Preparation of polymeric material with radiation, conductive and optical conversion energy storage function, involves mixing graphene/titania-doped powder and resin, and blending with sodium dihydrogen phosphate and polyethylene wax.

LI X, GE M, LIU S, LIU W, JIN L