国家/地区 韩国（3） 美国（3）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L029/16（2）
发明人 JUNG A（3）
公开年 2020（3）
申请年 2019（3）
专利权人 SAMSUNG ELEC.（3）

Graphene structure for e.g. static RAM, has silicon substrate whose surface is arranged with graphene, where material of substrate and carbon of graphene are covalently bonded and arranged between substrate surface and graphene.

LEE E, BYUN K, SONG H, SHIN H, KIM C, SHIN K, LEE C, JUNG A, BYUN K E, SONG H J, SHIN H J, SHIN K W, LEE C S, JUNG A R

Graphene formation involves forming carbon monolayer on substrate by injecting reaction gas into reaction chamber, where former reaction gas comprises source being carbon source and including component.

SHIN H, SHIN K, KIM C, NAM S, BYUN K, SONG H, LEE E, LEE C, JUNG A, CHO Y, SHIN H J, SHIN K W, NAM S G, BYUN K E, SONG H J, LEE C S, JUNG A R, CHO Y C

Interconnect structure for electronic device, has metal bonding layer for providing interfacial bonding between metal interconnect and graphene layer, where metal bonding layer includes metal material.

NAM S, SHIN H, SHIN K, KIM C, BYUN K, SONG H, LEE E, LEE C, JUNG A, CHO Y, NAM S G, SHIN H J, SHIN K W, BYUN K E, SONG H J, LEE C S, JUNG A R, CHO Y C