国家/地区 日本（3）
IPC部 C（3） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2） H01L（2）
IPC C01B031/02（2） H01L051/05（2） H01L051/30（2）
发明人 KAGAYA M（3）
公开年 2014（2）
申请年
专利权人 TOKYO ELECTR.（3）

Processing of to-be-processed material for electronic device, involves forming resist mask on graphene film of to-be-processed material and remove resist residue on graphene film by exposing to-be-processed material to oxygen radicals.

KAGAYA MUNEHITO, KAGAYA M

Organic-semiconductor film used for channel in transistor structure, has pseudo graphene structure including two-dimensional network structure which is formed continuously.

KAGAYA M, MATSUMOTO T, KATO D, KATO T

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D