国家/地区 韩国（3） 美国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（2）
IPC H01L027/108（2） H01L029/16（2） H01L029/66（2）
发明人 KIM H（3）
公开年 2014（2）
申请年 2013（3）
专利权人 KIM H（3）

Graphene device, includes gate electrode layer which is formed on gate insulation layer and third electrode layer formed on second portion of graphene layer.

SEO D, KIM H J, YOO I K, LEE M J, CHO S H, KIM H, YOO I, LEE M, CHO S

Negative electrode for lithium secondary battery in e.g. portable phone, has graphene layer grown on surface of germanium nanostructure using catalyst-free growth process, where nanostructure includes germanium nanowire and nanoparticle.

CHOI H C, KIM H, KIM H K

Memory device having FET structure, comprises graphene switching device having source, drain and gate electrodes and including Schottky barrier between drain electrode and channel in direction from source electrode toward drain electrode.

SEO D, KIM H, CHUNG H, PARK S, BYUN K, SONG H, HEO J, KIM H J, CHUNG H J, PARK S J, BYUN K E, SONG H J, HEO J S