国家/地区 韩国（5） 美国（2）
IPC部 H（4） C（3） B（2）
IPC大类 H01（4） B01（2） C01（2）
IPC小类 C01B（2） H01L（2） H01M（2）
IPC H01L029/423（2） H01L029/66（2） H01M004/36（2）
H01M004/62（2）
发明人 KIM I（5）
公开年 2022（3） 2023（2）
申请年 2021（5）
专利权人 KOREA ELECTR.（2） SAMSUNG ELEC.（2）

Producing core-shell composite used for electrodes in secondary batteries, comprises e.g. preparing active material paste by mixing hydrophobic particles and alcohol, and preparing spray solution by mixing dough with hydrophilic graphene.

YANG S, LEE G, JEONG S, KIM I, JUNG S Y, KIM B, RYUJIHYUN, LEE H, BAEK J G

Reduced graphene oxide used in electrode for secondary battery, comprises crystalline reduced graphene oxide in powder form having two-dimensional structure.

JEONG S Y, YANG S H, LEE G W, KIM I J, KIM B G, RYU J H, LEE H J, JEONG S, YANG S, LEE G, KIM I, KIM B, RYUJIHYUN, LEE H, JUNG S Y

Flash memory device for use in neuromorphic computing system, has blocking insulating layer that is arranged on floating gate and has second dielectric constant greater than first and upper gate that is disposed on blocking insulation layer.

KWAK J, PARK E P, LEE S Y, KIM I H, PARK J K, KIM J, KIL P J, JUNG Y J, JEONG Y, PARK J, KIM I, LEE S, PARK E, KWAK J Y

Producing graphene-based separator by heat-treating graphene oxide to form nanoporous graphene comprising multiple pores, oxidizing with oxidizing agent to functionalize oxygen functional groups, and stacking functionalized graphene.

KIM D W, KANG J H, KIM I, CHOI D C, RYU S Y

Semiconductor device has semiconductor structures with patterns, second conductive pattern that extends in second direction on gate insulation pattern, and second impurity region that is mounted on each of second semiconductor patterns.

HONG J, LEE K, PARK S, KIM I, KIM Y, KIM H, LI J, KIM I K, JIN R, KIM H C, PARK S H, LEE K H