国家/地区 韩国（5） 美国（2）
IPC部 H（5） B（4） C（4）
IPC大类 C01（4） B82（3） H05（3）
H01（2）
IPC小类 C01B（4） B82B（3） B82Y（2）
H01B（2） H05H（2）
IPC C01B031/02（3） B82B001/00（2） B82B003/00（2）
H01B001/04（2）
发明人 KIM S（6）
公开年 2013（5）
申请年 2012（3）  2013（3） 
专利权人 CHEORWON PLASMA RES INST（6）

Graphene nanoparticle composite for stacked structure, comprises primary nanoparticles of e.g. nickel, silicon, titanium, chromium, manganese, platinum, gold and/or magnesium, crystallized in surface of graphene having chemical bonds.

KIM S, SON B, SHIN M, RYU S, CHOI S, LEE K

Heat spreader comprises composite sheet in which metal filler material is united, and nano metal-graphene flake in which nano metal particle is crystallized on surface of graphene.

KIM S

Graphene-nanoparticle composite used for laminate for electrochemical device, comprises crystallized nanoparticles including nickel, silicon, titanium, chromium, manganese, iron, cobalt, silver and/or magnesium, on surface of graphene.

KIM S, CHOI S Y, SHIN M S, LEE K H, SON B G, RYU S H

Graphene-nanoparticles composite used for electrochemical device, comprises nanoparticles of nickel, silicon, titanium, chromium, manganese, iron, cobalt, copper, tin, indium, platinum, gold or silver crystallized on graphene surface.

KIM S, CHOI S Y, SHIN M S, LEE K H, SON B G, RYU S H, SON B, SHIN M, RYU S, CHOI S, LEE K

Plasma process apparatus used to process e.g. graphene used in the fabrication of transistor, comprises reactor comprising electrode portions to feed constant high voltage for plasma discharge reaction generated in processing channel.

KIM S, YONG D K, BYUNG G S, SUN Y C, MYOUNG S S, BYUNG H K, KYU H L, MOON W L

Plasma processing apparatus used for changing property of material e.g. graphene, has electrode portions that are arranged to supply high voltage of constant cycle such that plasma discharge reaction is generated in processing channel.

KIM S, YONG D K, BYUNG G S, SUN Y C, MYOUNG S S, BYUNG H K, KYU H L, MOON W L