国家/地区 韩国（4）
IPC部 C（3） H（3）
IPC大类 C01（3） H01（3）
IPC小类 C01B（3） H01L（3）
IPC C01B031/02（3） H01L031/042（2） H01L051/50（2）
发明人 KIM S（4）
公开年 2012（2）
申请年 2012（4）
专利权人 UNIST ACADIN.（2）

Semiconductor device has highly resistive layer that is formed in boundary face of graphene, and electrodes that are formed respectively on substrate and arranged at lower portion of respective graphene.

CHOI S H, KIM S, SHIN D H

Manufacture of graphene oxide reduced material for forming electrode for silicon-based semiconductor, involves synthesizing graphite oxide flakes from graphite flakes and forming graphene oxide dispersion solution.

JEONG S, LEE G, HAN J, JEONG H, KIM S, HAN J T, JEONG H J, JEONG S Y, KIM S H, LEE G W

Graphene sheet used for transparent electrode for e.g. display device, has lower sheet including layers of graphene and ridge formed on lower sheet and includes more layers of graphene.

KWON S, PARK K, KIM S, KWAK J, KWON S Y, KIM S Y, KWAK J S, KIM H

Preparation of graphene for e.g. transparent electrode, involves heating metal foil, increasing size of grains, supplying foil to target substrate, supplying carbon fuel, heating, diffusing carbon atoms and forming graphene on substrate.

KWON S, KIM S, KWAK J, YONG K S, YEOP K S, JINSEONG K