国家/地区 韩国（3） 美国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L029/10（3） H01L029/16（3） H01L029/66（3）
H01L029/06（2） H01L029/78（2）
发明人 KIM S Y（3）
公开年
申请年 2017（2） 
专利权人 GWANGJU INST SCI TECHNOLOGY（3）

Graphene semiconductor junction device comprises substrate, gate electrode, gate insulating layer, graphene layer, semiconductor layer, drain electrode, and source electrode on graphene layer to be separated from semiconductor layer.

KIM K Y, KIM S Y, LEE B H, KIM K

Graphene-based ternary barrister, has gate electrode layer formed on center of substrate, source electrode layer arranged to two sides of graphene channel layer, and drain electrode layer arranged to two sides of source electrode layer.

LEE B H, SHIM C H, KIM Y J, KIM S Y

Graphene transistor for inverter of electronic device, has graphene channel including graphene region opposite to another graphene region based on doped graphene region and formed with Fermi level different from that of doped region.

LEE B H, KIM Y J, KIM S Y