国家/地区 中国（3）
IPC部 H（3） B（2）
IPC大类 H01（3） B82（2）
IPC小类 H01L（3） B82Y（2）
IPC H01L029/16（3） H01L021/02（2） H01L021/336（2）
H01L023/532（2） H01L029/778（2） H01L029/786（2）
发明人 KONDO D（3）
公开年
申请年 2009（3） 
专利权人 FUJITSU LTD（3）

Semiconductor device manufacturing method, involves forming catalyze membrane on insulator, forming graphene layer with electric conduction film, matching conduction film with insulator, and performing graphene layer thin changing process.

KONDO D, SATO S

Manufacturing method of semiconductor device for, e.g. personal computer (PC), involves forming conductive film touching graphene layer on insulator.

KONDO D, SATO S

Graphite structure of electronic component e.g. thermoelectric conversion element, has domains that are formed by laminated structure of graphene sheet that are arranged in plane, such that adjacent domains are connected.

KONDO D, SATO S, IWAI T