国家/地区 日本（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L021/336（3） H01L029/786（3） H01L021/28（2）
H01L029/41（2） H01L029/417（2）
发明人 KONDO T（3）
公开年 2013（3）
申请年 2011（3）
专利权人 DOKURITSU GY.（2） FUJITSU LTD（2）

Method for manufacturing semiconductor device for forming graphene on insulating film, involves forming catalyst metal film on substrate, where insulating film is formed on grapheme metal film.

KONDO T

Manufacture of graphene for semiconductor device, involves forming metal film on predetermined region of substrate, forming membrane having catalytic ability less than metal film in side surface, and converting metal film into catalyst.

KONDO T

Semiconductor device has graphene electrode, which is formed in two dimensional structure, where boron nitride semiconductor layer is coupled with graphene end of graphene electrode.

KONDO T, IWAI D