国家/地区 韩国（3） 美国（3）
IPC部 C（3） H（2）
IPC大类 C23（3） C01（2） H01（2）
IPC小类 C23C（3） C01B（2）
IPC C23C016/505（3）
发明人 LEE C（3）
公开年
申请年 2021（3）
专利权人 SAMSUNG ELEC.（3）

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S

Apparatus for depositing two-dimensional material, comprises planar high-frequency antenna formed on second surface of dielectric window, and first gas nozzle configured to provide source gas into chamber.

SHIN H, SHIN K, LEE C, LEE C S, SHIN K W, SHIN H J

Apparatus for manufacturing graphene by using plasma, has gas supply for supplying reducing gas into reaction chamber at height from upper surface of substrate supporter in height direction of reaction chamber.

LEE C, LEE E, SHIN H, BYUN K, KIM S, BYUN K E, SHIN H J, LEE C S