国家/地区 韩国（2） 美国（2）
IPC部 B（3） C（2） H（2）
IPC大类 B82（2） C01（2） H01（2）
IPC小类 B82Y（2） C01B（2） H01B（2）
IPC B82Y030/00（2） B82Y040/00（2） C01B031/04（2）
C01B032/186（2）
发明人 LEE E（3）
公开年 2016（3）
申请年 2015（2） 
专利权人

Producing graphene sheet, comprises e.g. performing plasma processing on polyethylene terephthalate film, and coating oxidative graphene solution on polyethylene terephthalate film by spin coating method to produce oxidative graphene sheet.

JANG J, RYU J, LEE E

Manufacturing graphene structure involves providing gas including semiconductor material and gas including carbon into reaction chamber, and performing chemical vapor deposition to form core of semiconductor material and shell of graphene.

LEE E, CHOI B, LEE J, WHANG D

Manufacture of graphene used in manufacture of electric device, involves contacting hydrogen gas with metal catalyst, contacting metal catalyst with hydrocarbon gas, nitrogen gas, or inert gas, and forming graphene on metal catalyst.

CHO K W, LEE H C, LEE E H, CHO K, LEE E, LEE H, LI E