国家/地区 韩国（10） 美国（6）
IPC部 C（5） H（5） B（3）
IPC大类 C01（5） H01（5） B01（3）
IPC小类 C01B（5） H01L（4） B01J（3）
H01B（2）
IPC C01B031/02（5） B01J006/00（2） H01B013/00（2）
发明人 LEE H（11）
公开年 2014（9） 2013（2）
申请年 2013（11）
专利权人 UNIV SUNGKYU.（7）

Graphene electrode-molecule thin film composite structure used for flexible electronic device, has graphene electrodes and self-assembled monolayer formed between electrodes by chemical and physical bonding.

LEE H, SEO S H, SEO S

Phase transfer catalyst used in addition or condensation organic reaction, comprises graphene oxide catalyst having oxygen-containing functional group.

KIM Y, LEE H, SOME S

Floor heating structure, has cement mortar layer formed on bottom surface of main body and fixed with warm water pipe, where warm water pipe is fixed with bottom surface of main body and carbon nanotube and graphene are mixed.

LEE H, PARK I

Preparation of graphene oxide involves sintering powder comprising metal and graphite, acid-treating, electrolyzing, acid-treating separated waste graphite and reacting graphite with oxidizing agent.

LEE H

Producing graphene oxide using graphite waste, comprises e.g. sintering powder containing graphite and metal, acid treating and electrolyzing sintered powder, adding acid and oxidizing agent into separated graphite waste, and heat treating.

LEE H

Making semiconductor device used in e.g. cell phone, by forming graphene-based conductive layer over surface of conductive feature within opening in insulating material, and forming carbon-based adhesive layer over sidewalls of opening.

YANG S, LEE M H, LEE H, WU H, LI M, LI X, WU X, LEE M, YANG S Y, LEE H H, WU H C

Graphene oxide used as substituent for enzyme, in biological material industry and detergent industry, hydrolyzes ester linkage of organic compound.

JANG S, JEONG H K, LEE C, LEE H, HEON J S, HAN J, KYUNG J H

Light emitting device useful in an organic light emitting device, comprises a graphene quantum dot, and an organic light emitting material that is chemically or physically hybridized with the graphene quantum dot.

LEE H, LEE J H, SHIN Y H

FET e.g. N-type semiconductor channel transistor, comprises source electrode and drain electrode disposed on substrate, and channel layer comprising phosphorus-doped graphene and electrically connected to electrodes.

LEE H

Manufacturing conductive film useful in electrode of electronic device, comprises preparing composition including colloidal particles and graphene-based material, forming thin film on substrate, and removing colloidal particles.

LEE H, LEE J, CHOI J M, JANG S