国家/地区 韩国（6） 美国（4）
IPC部 C（6） H（4） B（3）
IPC大类 C01（5） H01（4） B82（3）
C09（3） C23（2）
IPC小类 C01B（5） B82Y（3） H01B（3）
C23C（2）
IPC C01B031/02（5） B82Y040/00（3） H01B001/04（3）
B82Y030/00（2） C01B007/13（2） C01B031/04（2）
H01B003/02（2）
发明人 LEE J H（6）
公开年 2011（6）
申请年 2010（3）  2011（3） 
专利权人 UNIV SUNGKYU.（3） LEE J H（2） SAMSUNG ELEC.（2）

Graphene oxide reducing agent, is halogen element.

LEE H Y, LEE J H, MOON I K

Manufacture of reduced graphene oxide for manufacturing reduced graphene-polymer composite, involves treating graphite with strong acid, mixing with halogen-substituted aromatic compound and stirring.

KU B C, PARK O K, LEE S H, NA S I, JO H I, KIM J K, LEE J H, KU B, PARK O

Resin plating comprises forming a graphene thin layer on a resin substrate and electroplating the resin substrate having the graphene thin layer formed on it.

BAE A H, SON S I, NAM J D, LEE J H, HWANG T S, OH J S, LEE H, EAH H B, SANG I S, JAE D N, JOON S O, JUN H L, TAE S H, HWANG T, LEE J, NAN J, PAE A, SUN S, OU J

Method of manufacturing graphene used for electronic device, involves forming graphene directly on germanium layer by supplying carbon-containing gas into chamber in which substrate is located.

LEE E, CHOI B, WHANG D, LEE J, CHOI B L, LEE E K, LEE J H, WHANG D M

Ceramic paint composition comprises preset amount of titanium dioxide, carbon nanotube, fumed silica, polyacrylate powder, zirconium oxide ceramic ball, chromium oxide, graphene, fullerene, polynaphthalene sulfonate and carrageenan.

LEE J H

Reducing agent used for manufacturing reduced graphene oxide for, e.g. semiconductors, comprises reducing agent with halogen element, preferably hydrogen iodide, and acid, with acidity of acid being weaker than that of reducing agent.

LEE H Y, LEE J H, MOON I K