国家/地区 韩国（7） 美国（4） 中国（3） 世界知识产权组织（2）
IPC部 C（8） H（4）
IPC大类 C01（5） C08（4） H01（4）
IPC小类 C01B（5） C08L（4） C08K（3）
H01L（3） C08J（2）
IPC C01B031/04（5） C08K003/04（3） H01L029/16（3）
发明人 LEE J H（8）
公开年 2016（8）
申请年 2015（5）  2016（3） 
专利权人 SAMSUNG ELEC.（3） UNIV CHONBUK.（3）

Graphene oxide/polymer composite material used in gas barrier film of electronic devices, is obtained by functionalizing graphene oxide with sulfonated poly(ether-ether-ketone) and polyvinylidene fluoride polymer.

LEE J H, KIM N H, LAYEK R K

Gas-barrier film used for manufacturing tank for storing hydrogen, comprises graphene oxide and polyvinyl alcohol binder resin in specified weight ratio.

LEE J H, KIM N H, LAYEK R K, K L R

Preparing high strength epoxy resin involves dispersing silica nanoparticles in ethanol containing aminoalkyltrialkoxysilane to obtain silane modified silica which is reacted with graphene oxide and cross linking agent.

LEE J H, KIM N H

Polypropylene-graphene composite material for e.g. vehicle component, comprises polypropylene substrate, and organic graphene oxide masterbatch obtained by reacting modified graphene oxide with maleic anhydride-grafted polypropylene.

KONG N K, KIM H S, LEE J H, LEE B C, OH Y S, PARK S Y, CHOI S M, WOO J H, KIM H, WU Y, KONG L, LEE J, LEE B, CUI C, PIAO X, YU C

Graphene particles used for electrode active material for electrochemical device, are three-dimensional porous containing folded graphene sheet, and having average diameter of specified value.

LIM J C, LEE J H, PARK H S, LIN Z, LI T, PIAO X, LIM J, HYUN L J, HUNSOO P

Layer structure for electronic device, has material layers which are on sides of diffusion barrier layer and diffusion barrier layer includes nano-crystalline graphene layer.

SONG H, NAM S, CHO Y, PARK S, SHIN H, LEE J, SONG H J, NAM S G, CHO Y C, PARK S J, SHIN H J, LEE J H

Method of forming graphene layer for producing graphene-containing device e.g. diode involves forming graphene on region of underlayer using source gas and forming another graphene on another region using another source gas.

KIM H, LEE J, JIN X, KIM H W, LEE J H

Fin-type graphene device i.e. graphene FET, for e.g. optical sensor, has gate electrode placed on gate insulating layer, and source electrode and separate drain electrode that are placed on side surface of graphene channel layer.

LEE M, LEE J, HEO J, LEE K, LEE M H, LEE J H, HEO J S, LEE K Y