国家/地区 美国（5） 韩国（4） 世界知识产权组织（2）
IPC部 B（6） C（5） H（5）
IPC大类 H01（5） C01（4） B01（3）
B82（3） C23（3） B32（2）
IPC小类 C01B（4） H01L（4） B82Y（3）
C23C（3） H01B（3） B01J（2）
B32B（2）
IPC B82Y040/00（3） C01B031/02（3） C23C016/26（3）
B01J019/08（2） B82Y030/00（2） B82Y099/00（2）
H01B001/04（2） H01L021/268（2）
发明人 LEE K（6）
公开年 2012（6）
申请年 2011（5） 
专利权人 KOREA ADV IN.（2）

Field effect transistor, to detect biomarker, comprises source- and drain -electrode distanced apart from semi-conductor substrate, and gate electrode having uniform layer of reduced graphene oxide encapsulated semiconductor nanoparticles.

LEE K, MYUNG S, SOLANKI A

Polymer resin composition useful for manufacturing an insulating film for manufacture of a build-up multi-layered printed circuit board, comprises polymer resins, and graphene for linking the polymer resins with larger attraction.

LEE K S, HONG S S, LIM H H, LEE H Y, CHO J C, KYU S L, SANG S H, HYUN H L, HWA Y L, JAE C C, HONG S, LEE H, LEE K, LIN H, JO J, LIM H, CHO J

Manufacture of graphene for fabricating graphene semiconductor device, involves contacting reaction gas for graphene growth on substrate surface, heating substrate, and growing graphene.

LEE K, CHOI I, LEE K J, CHOI I S, JAE L G, SEONG C I

Forming graphene, comprises providing substrate and carbon-containing reactant source in chamber, and radiating laser beam on substrate to decompose carbon-containing reactant source and form graphene over substrate.

LEE K, CHOI I, CHOI S, HONG B, LEE K J, CHOI I S, CHOI S Y, HONG B H

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K

Ball-milled graphene nano-powder or ribbon purifying method, involves separating magnetic impurities during stirring suspension using magnet, where impurities are incorporated into graphene powder during ball-milling.

LEE J K, LEE K, LEE K I, GAP L J, IL L G