国家/地区 韩国（2） 美国（2）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（2）
IPC
发明人 LEE M（3）
公开年 2014（2）
申请年 2013（3）
专利权人

Graphene device, includes gate electrode layer which is formed on gate insulation layer and third electrode layer formed on second portion of graphene layer.

SEO D, KIM H J, YOO I K, LEE M J, CHO S H, KIM H, YOO I, LEE M, CHO S

Making semiconductor device used in e.g. cell phone, by forming graphene-based conductive layer over surface of conductive feature within opening in insulating material, and forming carbon-based adhesive layer over sidewalls of opening.

YANG S, LEE M H, LEE H, WU H, LI M, LI X, WU X, LEE M, YANG S Y, LEE H H, WU H C

Transparent electrode, useful in e.g. laser diode, LCD and touch panel apparatus, comprises substrate, graphene layer formed on substrate, network of nanowires, pinning layer prepared by chemical vapor deposition, and nano-material layer.

PARK J U, LEE M S, LEE K, KIM M J, PARK J, LEE M, KIM M