国家/地区 美国（4）
IPC部 H（3） C（2）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L021/44（2） H01L021/768（2） H01L023/522（2）
H01L023/532（2）
发明人 LEE M（4）
公开年 2016（3）
申请年 2015（4）
专利权人 TAIWAN SEMIC.（2）

Fin-type graphene device i.e. graphene FET, for e.g. optical sensor, has gate electrode placed on gate insulating layer, and source electrode and separate drain electrode that are placed on side surface of graphene channel layer.

LEE M, LEE J, HEO J, LEE K, LEE M H, LEE J H, HEO J S, LEE K Y

Formation of complex plating film used in electronic material, involves adding graphene-coated metal powder to plating solution, and forming plating film by performing electric plating in solution to which metal powder is added.

SUH S, SONG Y, PARK J, KIM T, SON H, SHIN J, LEE M, LEE J, LEE C, CHO Y, BAEG S, AHN B, YUN S

Method of manufacturing device, such as, transistor, capacitor, resistor, involves catalytically growing graphene layer and depositing amorphous carbon layer are performed simultaneously.

YANG S, LEE H, LEE M, YEH C, LIOU P

Semiconductor device for use in e.g. personal computer, has carbon-based adhesive layer arranged over sidewalls, and carbon nano-tube arranged within insulating material over graphene-based conductive layer and carbon-based adhesive layer.

YANG S, LEE M, LEE H, WU H