国家/地区 韩国（2） 美国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L021/768（2） H01L023/522（2） H01L023/528（2）
H01L023/532（2）
发明人 LEE M（4）
公开年 2020（4）
申请年 2019（4） 
专利权人 TAIWAN SEMIC.（2）

Analyzing physical shape of graphene, comprises preparing silicon substrate having fine grooves, preparing specimen by forming graphene and metal coating film on silicon substrate, and observing specimen in scanning electron microscope.

HUN H S, CHOI K, AN W, KIM S T, LEE M, KIM H G

Method for forming graphene layer, involves performing carbon dissolution process to cause graphene layer to form between seed layer and underlying conductive feature, and filling remainder of trench with conductive material.

YANG S, LEE M, SHUE S, LI M, SUI X

Semiconductor structure has metal line that is located over via and in contact with first graphene layer and second graphene layer peripherally enclosing metal line and first graphene layer which extends along top surface of via.

YANG S, LEE M, SHUE S

Producing graphene hydrogen storage container, comprises producing container having a specific shape with a selected material, and installing upper pipe and lower pipe) in upper- and lower connection portion of the container.

LEE M