国家/地区 韩国（5）
IPC部 C（5） B（4）
IPC大类 C01（5） B01（3）
IPC小类 C01B（5） B01J（3）
IPC C01B031/02（5） B01J019/12（2）
发明人 LEE S S（5）
公开年 2013（3）
申请年 2012（5）
专利权人 KOREA RES IN.（3） KOREA INST S.（2）

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S

Preparing graphene compound that is e.g. used in dispersion solution e.g. substrate printing ink, comprises reacting primary amine or secondary amine with graphene oxide in presence of epoxy group, amine group, hydroxyl or carboxyl group.

LEE S S, LEE I Y, AN K S, CHUNG T M, LEE Y K, KIM C G, LIM J S, JEON D J, PARK B K, JEONG S J

Graphene touch panel comprises base substrate, polymer stamp, organic insulator and patterned graphene layer formed on organic insulator using organic solvent.

LEE S S, KIM H S, JUNG M W, LIM J, AN K S

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H