国家/地区 韩国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L021/02（2） H01L029/16（2）
发明人 LEE Y J（3）
公开年
申请年
专利权人 KOREA INST CERAMIC ENG TECHNOLOGY（3）

Manufacture of beta-gallium trioxide thin film layer for semiconductor device, involves stacking graphene layer onto sacrificial layer formed on carrier substrate, and transferring beta-gallium trioxide nano-flake seeds by taping method.

JEON D W, RA Y, KIM S, LEE Y J, HEE H, LIM T Y, KIM J H, CHOI Y J

Method for separating graphene layer, gallium nitride buffer layer and gallium nitride crystal layer from carrier substrate, involves removing sacrificial layer on substrate to lift off graphene layer, buffer layer, and crystal layer.

JEON D W, RA Y, KIM J H, KIM S, LEE Y J, LEE M J, LIM T Y, HEE H

Photoelectrode material comprises substrate, gallium nitride layer which is provided on substrate, patterned graphene layer which is provided on upper portion of gallium nitride layer, where gallium and indium are based with nitride.

JEON D W, HWANG J H, LEE Y J, LEE M J, KIM J H