国家/地区 中国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（2）
IPC H01L021/336（2） H01L029/10（2） H01L029/51（2）
H01L029/78（2）
发明人 LEI T（3）
公开年 2014（3）
申请年 2014（2） 
专利权人 UNIV XIDIAN（2）

Di-electric aluminum oxide double-gate graphene transistor, has transistor unit provided with graphene channel and grid medium layer, where two sides of channel are connected to gate electrode and channel is matched with grid medium layer.

HU Y, LEI T, ZHANG Y, GUO H, ZHAO Y, HUANG H

Silicon substrate aluminum oxide gate di-electric dual-gate graphene transistor, has silicon substrate provided with graphene channel, gate electrodes, Aluminum sulfate Trioxygen gate dielectric layer and carbonization layer.

HU Y, LEI T, ZHANG Y, GUO H, ZHAO Y, HUANG H

Preparation of nitrogen-doped graphene catalyst comprises dispersing graphite oxide in solvent, ultrasonically processing, adding at least one nitrogen-containing organic micromolecule, hydrate of metal salt, and dispersing in solvent.

QIAO J, SHI J, XU P, ZHOU X, CHEN S, LEI T, LI Y, WU M, JIAN S, XU N, TANG Q