国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类
IPC
发明人 LIANG Q（2）
公开年 2011（2）
申请年 2010（2）
专利权人

Graphene device structure for complementary metal-oxide-semiconductor, has semiconductor doped regions separated from gate region, where contacts of structure are formed on semiconductor doped regions.

LIU X, ZHU H, WANG W, LIANG Q, JIN Z, ZHONG H, YE T

Conducting additive of lithium ion battery useful in electrode material, comprises a graphene (a black powder), and a carbon material made of a graphene sheet, which is in parallel manner.

LIANG Q, MEI J, SHI H, YUE M, ZHANG S