国家/地区 韩国（3） 美国（3）
IPC部 C（3） H（3）
IPC大类 H01（3） C01（2） C23（2）
IPC小类 H01L（3） C01B（2） C23C（2）
IPC C23C016/26（2） H01L021/02（2） H01L029/16（2）
发明人 LIM H（4）
公开年 2020（4）
申请年 2018（2）  2020（2） 
专利权人 SAMSUNG ELEC.（3）

Wiring structure for use in electronic device e.g. memory device, has nanocrystalline graphene layer which is provided on substantial entirety of conductive material layer, seed layer is provided on another conductive material layer.

LEE C, SHIN H, PARK S, IM D, PARK H, SHIN K, LEE J, LIM H

Pre-treatment of substrate e.g. non-metal substrate such as semiconductor substrate or dielectric substrate used for forming graphene directly, involves using pre-treatment gas including carbon source and hydrogen.

SHIN K, LEE J, NAM S, SHIN H, LIM H, JUNG A, BYUN K, CHO Y, SHIN K W, LEE J H, NAM S G, SHIN H J, LIM H S, JUNG A R, BYUN K E, LEE J I, CHO Y C

Producing activated carbon comprises preparing graphene oxide by chemical exfoliation process using carbon source and acid, separating graphene oxide and residual carbon source, heating residual carbon source and maintaining temperature.

CHUN D, KIM S, KIM H W, LIM H, RUDLY C, LEESIHYUN, CHOI H K, YOO J, LIM J, RHIM Y

Formation of nanocrystalline graphene used for semiconductor device, involves arranging substrate in chamber, forming protective layer, injecting reaction gas, generating plasma, and growing nanocrystalline graphene on protective layer.

JUNG A, SHIN K, BYUN K, SHIN H, LIM H, NAM S, SONG H, CHO Y, JUNG A R, SHIN K W, BYUN K E, SHIN H J, LIM H S, NAM S G, SONG H J, CHO Y C