国家/地区 韩国（4） 美国（3）
IPC部 H（4） C（3） B（2）
IPC大类 H01（4） C01（3） B82（2）
IPC小类 H01L（4） C01B（3） B82B（2）
IPC C01B031/02（3） B82B001/00（2） B82B003/00（2）
H01L029/49（2） H01L029/786（2）
发明人 LIM J A（4）
公开年 2014（3）
申请年 2013（2） 
专利权人 KOREA INST S.（4）

Formation of reduced graphene oxide used for electronic device e.g. thin film transistor, involves forming graphene oxide on substrate, and providing graphene oxide with white light pulse to reduce graphene oxide.

LIM J A, SONG Y, HONG J, CHANG J Y, SONG Y W, HONG J M

Manufacturing single step thin film transistor, comprises preparing ink including graphene oxide or reduced graphene oxide dispersed solution; forming pattern on substrate; and forming semiconductor channel, and source and drain electrodes.

LIM J A, SONG Y W, HONG J M, CHOI W K, EOM D S, SONG Y, HONG J, CHOI W

Making nanoparticles of target material, involves mixing graphene oxide with aqueous solvent to give aqueous solution, mixing target material with organic solvent to give organic solution, and mixing aqueous solution with organic solution.

LIM J A, SONG Y, HONG J, YOO D Y, KIM H, SONG Y W, HONG J M, KIM H S

Producing a graphene to make transparent electrode of e.g. optical detector, comprises depositing catalyst on substrate, heating substrate by vapor deposition of carbon contained in catalyst, cooling heated substrate and etching.

SONG Y W, LIM J A, KANG D S, KIM W J