国家/地区 中国（3） 美国（2）
IPC部 C（3） H（3） B（2）
IPC大类 C01（3） H01（3）
IPC小类 C01B（3） H01L（3）
IPC C01B031/04（3）
发明人 LIN M（4）
公开年 2015（2）
申请年 2014（4）
专利权人

Semiconductor device e.g. transistor, has second active area, graphene channel that is formed between first and second active areas, comprises first and second sides and first in-plane gate that is proximate to first side.

LIN M, LIN S, LEE S, LIN M Y, LIN S Y, LEE S C, LI S

Graphene thin film of thermoelectric device, has sheet layers and connecting portions that form continuous graphene thin film structure, and connecting portions that are provided with graphene of monolayer of carbon atoms.

CHEN K, LIN M, JU S, HSIEH Y, CHEN K Y, LIN M C, JU S P, HSIEH Y P

Method for preparing graphene-modified material that is utilized in detecting sodium ions in mixed solvent of ethanol and water, involves adding dicyclohexylcarbodiimide to graphite in rare earth nanomaterial solution followed by heating.

DAI L, GUO R, LIU Y, YANG M, CHENG R, LIN M, BU Y

Preparation of patterned graphene used for preparing photoelectronic device, comprises uniformly coating solid carbon source on a substance provided with a catalyst and forming high graphic pattern by high-temperature reaction.

HU H, HU L, LI F, YE Y, ZHANG Y, GUO T, WU C, ZHOU X, LIN M