国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人 LIN S（4）
公开年 2015（2） 2016（2）
申请年 2015（4）
专利权人 UNIV ZHEJIAN.（2）

Chemical vapor deposition based preparation method of silicon doped graphene material used in e.g. optoelectronic technology field, involves heating treated substrate and carrying out reaction in presence of carbon source gas.

LIN S, LI X, XU W, ZHANG C

Preparation of large size graphene oxide or graphene used for, e.g. flexible display by mixing graphite and intercalation agent, soaking in expansion agent, adding acid and oxidizing agent mixture, filtering, washing, and stripping.

DONG L, LIN S, LU H, MA C

Method for preparing amino functionalized graphene quantum dot, involves centrifuging and washing catalyst to remove excess ethylenediamine after refluxing, and preparing amino functionalized graphene quantum dots.

LIN S

Preparing silicon doped graphene useful in micro-nano device, comprises placing graphene in a furnace tube, evacuating, passing protective gas through the inner furnace tube and heating, passing silane, reacting and cooling.

CHEN H, LIN S, LI X, XU W, XU Z, WANG P, WU Z, ZHANG C, ZHONG H