国家/地区 中国（4）
IPC部 C（2） H（2）
IPC大类 H01（2）
IPC小类 H01B（2） H01L（2）
IPC H01B013/00（2） H01L031/0224（2）
发明人 LIN T（4）
公开年 2012（2）
申请年 2011（4）
专利权人 CHINESE ACAD.（4）

Forming bilayer hexagonal graphene single crystal domain used as e.g. transistor involves heating catalyst having metal substance and alloy, into chemical vapor deposition reaction chamber, adding carbon/hydrogen/protective gas and cooling.

BI H, HUANG F, LIN T, WAN D

Graphene-based back electrode material used for polycrystalline cadmium telluride solar cell, has three-dimensional continuous network structure of graphene and binder.

BI H, HUANG F, LIANG J, LIN T

Preparation of three-dimensional continuous graphene network structure composite material as e.g. electrical conductive material, involves adding three-dimensional continuous graphene skeleton composite structure, soaking and curing.

BI H, HUANG F, LIN T, TANG Y

Graphene/copper nano-wire composite conductive material useful in fields of photovoltaics, semiconductors, electronics or energy storage devices, comprises graphene, copper nano-wire and binding agent.

BI H, HUANG F, LIANG J, LIN T