国家/地区 美国（4）
IPC部 B（2） C（2） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2） H01L（2）
IPC
发明人 LIN T（4）
公开年 2017（2）
申请年 2016（2） 
专利权人 UNIV CHUNG Y.（2）

Preparing graphene metal composite material by mixing metal powder, graphene powder and binder, heating powder material to melt, molding and solidifying, removing binder from green part, and sintering brown part.

TSENG W, SHIH Y, LIN T

Fabrication method for casting graphene quantum dot on nitride semiconductor LED, involves casting graphene quantum dot solution on LED, and standing still for evaporating ethanol, and forming graphene-quantum-dot-cast layer on LED surface.

SHEN J, LIN T, SHEN Z, LIN Z

Semiconductor device for electronic application e.g. personal computer, has first insulating layer that is formed over first portion of first graphene layer.

YANG T, BAO T, LIN T, CHU W, YANG D, ZHU W

Synthesis of graphene quantum dots used for e.g. light sensor, involves fixing graphene aqueous solution on spin coater, irradiating pulsed laser from laser source, exfoliating multiple graphene sheets and forming multiple quantum dots.

SHEN J, LIN T, CHIH K