国家/地区 中国（5） 美国（2） 世界知识产权组织（2）
IPC部 C（6） H（2）
IPC大类 C01（4） H01（2）
IPC小类 C01B（4） H01L（2）
IPC C01B031/04（3）
发明人 LIU F（8）
公开年 2014（7）
申请年 2013（8）
专利权人 UNIV NANJING（3）

Method for forming e.g. graphene-based electromechanical switch, involves forming flexible conductive element between sidewalls to establish gap between flexible conductive element and gate material.

GUO D, HAN S, LIU F, WONG K K H, YUAN J

Manufacture of graphene-doped polyaniline-coated nickel zinc ferrite mesoporous material for e.g. electromagnetic wave absorbing material involves mixing magnetic nanoparticles with potassium permanganate, calcining, and cooling.

XIE Y, HU D, LIU F, WANG Y, LE Z, ZHANG K, PAN J

Photodiode device operating method involves exposing photodiode device having monolayer of carbon-based material such as graphene, and layer of n-doped semiconductor material such as silicon, to electromagnetic radiation.

AN X, LIU F, KAR S

Fabricating graphene based nanostructure used in e.g. electronic devices involves depositing catalyst onto substrate to form catalytic layer; nanopatterning catalytic layer to form nanotemplate; and depositing graphene onto nanotemplate.

LIU F

Preparation of purple fluorescent reduction-oxidation graphene quantum dot involves providing graphene oxide as raw material with nitric acid, diluting with deionized water, oxidizing with deionized water, centrifuging, and cooling.

DU Y, ZHONG W, TANG N, LIU F

Preparation of fluorine and nitrogen-doped graphene oxide involves placing xenon difluoride and urea in cups, providing stainless steel tank into drying box, drying and cooling.

DU Y, ZHONG W, TANG N, LIU F

Preparation of nitrogen-doped graphene oxide comprises placing graphene oxide and ammonia in double-layer quartz cup, sealing, placing stainless steel tank in drying oven and cooling.

DU Y, TANG N, ZHONG W, LIU F

Polyvinylidene fluoride/graphene composite material for e.g. piezoelectric material, consists of polyvinylidene fluoride, graphite, dispersing agent, wetting agent, surface active agent, and compatibilizer in specified amounts.

CHEN J, LIN H, LIU F, XIANG Y, XUE L