国家/地区 中国（3）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3）
IPC C23C016/26（3）
发明人 LIU J（3）
公开年 2011（3）
申请年 2010（3） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（3）

Preparation of single-atom layer graphene film comprises performing chemical absorption and halogenation between diazomethane and aerated gas iodine simple substance to form instable carbon-iodine key, and irradiating.

LIU J, XIA Y, RAO Z

Preparing single atomic layer graphene film comprises placing silicon carbide substrate in reaction cavity of atomic layer deposition device, feeding carbon source gas into cavity, halogenating and generating corresponding by-product.

LIU J, RAO Z, XIA Y

Carbon chemical adsorbing useful for preparing of graphene thin film by atom layer deposition, comprises forming covalent bond with an atom on surface of a substrate by forming a substance containing carbon atoms having unbounded electrons.

LIU J, RAO Z, XIA Y