国家/地区 中国（3）
IPC部 C（2） H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L021/336（2）
发明人 LU G（3）
公开年 2014（3）
申请年 2014（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（3）

Manufacture of graphene flash memory involves patterning conductive layer formed on semiconductor substrate, forming source/drain electrodes, dielectric layers, graphene layer and gate electrode, and etching dielectric layers.

WANG H, JIANG M, LI L, XIE X, WU T, CHEN J, LU G, XIE H, ZHANG X

Graphene contact resistance reducing method, involves forming source and drain electrode area on surface of thin film, forming hole in drain metal electrode, forming grid medium layer on film, and fixing gate with grid medium layer.

WANG H, JIANG M, XIE X, WU T, CHEN J, LU G, SUN Q, XIE H, ZHANG X

Preparation of graphene crystal domain involves forming copper-nickel double sided substrate, introducing hydrogen, reacting, introducing carbon source, growing graphene crystal domain, introducing argon gas and cooling.

YANG C, WU T, LU G, ZHANG X