国家/地区 中国（6）
IPC部 C（4） H（2）
IPC大类 C08（3） C09（3）
IPC小类 C08K（2） C09C（2）
IPC C08K003/04（2）
发明人 LU S（6）
公开年 2012（3） 2014（2）
申请年 2012（6）
专利权人 UNIV GUILIN .（3） UNIV SHENYAN.（2）

Insulation gate FET, has graphene conductive layer formed with gate oxide layer and semi-conductor layer, where semi-conductor layer is formed with channel area and cell area.

ZHU W, HU A, LU S, ZHU Y

Making carbon nano tube/graphene oxide/nano iron oxide sandwich hybrid wave-absorbing thin film involves making graphene oxide-carbon nano-tube aqueous solution, and nano iron oxide dispersion followed by subjecting to vacuum suction device.

ZHANG C, LU S, NIE P, WANG J, CENG X

Preparing fiber surface sizing agent based on carbon nano-tube-graphene oxide-polyhedral oligomeric silsesquioxane monomer, comprises dispersing graphene oxide solution with carbon nano-tube, mixing with the monomer solution, and dispersing.

LI Q, GAO Y, CENG X, LU S, NIE P, ZHANG C

Manufacture of graphene oxide-grafted thermotropic liquid crystal compound involves precipitating reaction product of thermotropic liquid crystal compound and chloride of graphene oxide, washing and drying decompressed precipitate.

LEE S, LING R, LU S, QI B, YUAN Z

Grafting graphene oxide by biphenyl thermotropic liquid crystal compound, comprises e.g. putting e.g. sodium hydroxide, stirring, and adding hydroxyl-biphenyl diphenol, chlorine and water to precipate product, filtering and drying.

LEE S, LING R, LU S, QI B, XU X, YUAN Z

Manufacture of silica nanoparticle-grafted graphene oxide-modified epoxy resin condensate, involves adding silica nanoparticle-grafted graphene oxide to epoxy resin substrate, decompressing, adding curing agent, curing and molding.

LEE S, LING R, LIU K, LU S, QI B, XU X