国家/地区 中国（3）
IPC部 G（2）
IPC大类 G03（2）
IPC小类 G03F（2）
IPC G03F007/20（2）
发明人 LUAN H（3）
公开年 2022（3）
申请年 2022（3）
专利权人 GU M（3） LUAN H（3） ZHANG Q（3） CHEN X（2）

Photonic memristor useful in artificial intelligence field, has Fabry-Perot cavity formed on upper surface of substrate, Fabry-Perot resonator includes first reflective film formed on upper surface of substrate, and graphene oxide nonlinear dielectric layer arranged between two reflective films.

GU M, LUAN H, ZHANG Q

Photoetching of erasable graphene involves photoetching oxidation graphene by laser processing, graphene, and performing oxygen plasma treatment to oxidized graphene after laser treatment.

GU M, ZHANG Q, CHEN X, LUAN H, WAN Z

Double-beam lithography method of graphene-over diffraction limit, involves using double-beam laser lithography system of annular reduction beam and spherical oxidation beam to photo-etch oxidation graphene film.

GU M, ZHANG Q, LUAN H, CHEN X