国家/地区 中国（7） 世界知识产权组织（2）
IPC部 B（5） C（4） H（2）
IPC大类 B01（4） B82（2） C01（2）
C08（2） H01（2）
IPC小类 B01J（4） B82Y（2） C01B（2）
C08L（2）
IPC B82Y030/00（2） B82Y040/00（2）
发明人 LUO J（8）
公开年 2013（4） 2012（2） 2014（2）
申请年 2012（8）
专利权人 UNIV JIANGNA.（3） LUO J（2） UNIV TONGJI（2）

Electrodeposition of graphene/chitosan composite film used for membrane material, by depositing graphene oxide and chitosan mixture into cathode, and electrodepositing to reduce graphene oxide into graphene.

JIANG S, LIU X, LUO J, SUN J, CHEN Y, SONG X

Preparing molecularly imprinting graphene composite material, involves dispersing graphene oxide in buffering liquid, adding hydrochloric acid in dopamine and template molecules, stirring, washing, and eluting to remove template molecules.

JIANG S, LIU X, LUO J, ZHANG L, ZHENG Y, YAN D

Preparation of mesoporous-shaped graphite type carbon nitride/nitrogen-doped graphene oxide composite material by treating mixture of nitrogen-doped graphite alkene, hole-shaped carbon nitride, surface active agent and deionized water.

FENG L, LUO J, CHEN Y, YANG L

Preparing nano-composite material comprises adding graphene oxide and surface active agent into deionized water and then mixing to obtain colloidal solution, and adding mesoporous graphite-type carbon nitride with the colloidal solution.

LUO J, YANG L, FENG L, CHEN Y

Polyvinylpyrrolidone-graphene catalyst support material for metal catalyst preparation contains graphene which is covalently bonded to polyvinylpyrrolidone.

LUO J, PENG S, WU Y, FAN X

Synthesizing method of e.g. crumpled paper ball used as electrode material of e.g. microbial fuel cell, capacitor, battery involves forming aerosol droplets of graphene dispersion solution, which are compressed into crumpled particle.

HUANG J, JANG H D, LUO J

Preparing graphene/polyaniline laminated films useful for sensors and supercapacitors, by immersing processed substrate in polyaniline solution, drying substrate, immersing substrate in graphene dispersion liquid, and drying substrate.

CHEN Y, LUO J, MA Q, ZHU Z

Method of preparing double-gate MOSFET based graphene used in e.g. microelectronics field, involves forming back grid electrode over high-k gate thin film at back of substrate, after forming graphene at interface of substrate layers.

CHAI Z, CHEN J, LUO J, WU Q, YU T