国家/地区 中国（4） 美国（2） 世界知识产权组织（2）
IPC部 H（4） B（2）
IPC大类 H01（4） B82（2）
IPC小类 H01L（3） B82Y（2）
IPC B82Y040/00（2） H01L029/78（2）
发明人 LUO Z（4）
公开年 2012（4）
申请年 2011（4）
专利权人 INST MICROEL.（2） LUO Z（2）

Semiconductor device, has cap layer set on gate stack and sidewall surrounding gate stack and cap layer, and semiconductor layers epitaxially grown on exposed graphene layer, where metal contact layers are formed on semiconductor layers.

YIN H, LUO Z, ZHU H

Method for manufacturing semiconductor device, involves forming graphene layer on insulating layer, forming gate structure on graphene layer, and forming doped region in semiconductor substrate.

LUO Z, YIN H, ZHU H

Method of fabricating graphenic material used as electrical conductor for devices e.g. display, involves growing sheet of graphene on planarized metallic substrate.

JOHNSON A T, LUO Z, JOHNSON A

Modulating Raman fiber laser has stokes that are respectively provided with optical fiber bragg grating structure and pumping source where graphene passive switch is inserted in optical fiber bragg grating structure.

CAI Z, LIU Z, LUO Z, WANG J, XU H, YE C, ZHOU M