国家/地区 中国（4）
IPC部 C（2） H（2）
IPC大类 C08（2） H01（2）
IPC小类 C08K（2） C08L（2） H01L（2）
IPC C08K003/04（2） H01L021/336（2） H01L029/78（2）
发明人 LUO Z（4）
公开年 2013（3）
申请年 2012（4）
专利权人 INST MICROEL.（2）

MOSFET, has source/drain region formed on semiconductor substrate, and gate conductor extended toward upper part of source/drain region, where semiconductor substrate is formed with oxide semiconductor substrate and graphene layer.

CHEN L, LUO Z, ZHU Z

Forming graphene nano-ribbon to form metal-oxide-semiconductor field effect transistor involves forming stack of seed/growth blocking layer on insulating substrate, then patterning and growing graphene nano-ribbon at seed layer side surface.

LIANG Q, LUO Z, YIN H, ZHU H

Preparing graphene oxide-polyaniline composite nano sheet, comprises e.g. introducing graphene oxide and distilled water into ultrasonic reactor, pouring aniline-inorganic acid solution, reacting, centrifuging, separating, and reducing.

LI J, LUO Z, TANG H, XU X, WANG Z

Nanocomposite material, useful in the fields of mechanical seal and lubrication, comprises graphene or graphene derivative, polytetrafluoroethylene and glass fiber.

FAN X, LUO Z, XU Y, YANG H