国家/地区 中国（3）
IPC部 H（3）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L045/00（2）
发明人 LV H（3）
公开年 2015（2）
申请年 2015（3） 
专利权人 INST MICROEL.（2）

Non-volatile resistive memory, has graphene barrier layer stopping easily oxidizable metal ions from migrating into inert metal electrode through resistive functional layer under effects of electric field during programming process.

LIU Q, LIU M, SUN H, ZHANG K, LONG S, LV H, BANERJEE W, BENAGI R

Storage device, comprises insulating substrate, lower electrode, lower barrier layer graphene, resistive functional layer and upper electrode, where resistive functional layer is located on lower barrier layer graphene.

LV H, LIU M, LIU Q, SUN H, ZHANG K, BENAGI R, BANERJEE W

Graphene distributed type amplifier, has grate transmission line whose two ends are connected with LC matching units, and graphite FET provided with leakage transmission line and transmission line inductor unit.

QIAN H, WU H, YU Z, ZHANG J, LV H, HUANG Y, LYU H