国家/地区 中国（4）
IPC部 C（2）
IPC大类
IPC小类
IPC
发明人 LV Y（4）
公开年 2013（4）
申请年 2012（2） 
专利权人

Gate structure of gate-controlled semiconductor device e.g. graphene gate control device, has substrate, middle layer and grid structure main portion that are connected with Schottky gate along grid width direction of medium grid.

FANG Y, DUN S, GU G, FENG Z, SONG X, WANG Y, LV Y

Preparation of high-performance carbon fiber cellulose spinning solution by crushing oxidized graphene, adding into solvent, stirring, ultrasonic processing, adding sodium hydroxide, dissolving, adding cellulose, dissolving, and defoaming.

JI J, LV Y, YAO L, GONG N

Device to provide electrical stimulation and shear force to cells in micro-structure is formed of three layers with lower gasket having chamber having electrode plate with micro-structure sheet and polydimethylsiloxane and graphene films.

DONG C, LV Y, ZOU Y

Anti-static foaming material comprises high melt strength polypropylene, graphene, foaming agent e.g. nitroso foaming agent, compatibilizer e.g. maleic anhydride graft-modified polypropylene and coupling agent e.g. vinylsilane.

GAO D, LV M, ZHANG S, CHEN L, XU K, YANG Q, GUO P, LV Y, XU M