国家/地区 中国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（2）
IPC
发明人 MA P（3）
公开年 2012（3）
申请年 2012（2） 
专利权人 INST MICROEL.（2）

Method for preparing graphene/alpha nickel hydroxide nanometer composite material, involves preparing oxide aqueous solution, performing chemical reduction by aqueous solution, and mixing and reflowing nickel and urea in alcohol solvent.

MA P, ZHANG L, ZHANG W, ZHANG X

Method for forming graphene-metal Ohmic contact region, involves performing electronic beam evaporation or sputtering process on surface of sample by deposition of metals and peeling off surface of sample and drain of photoresist.

CHEN J, GUO J, JIN Z, MA P, PAN H, PENG S, WANG X

Method for preparing substrate of graphene thin film semiconductor device, involves providing metal catalyst layer with substrate, and forming tape clipping layer and adhesive tape layer on organic colloid layer.

GUO J, JIN Z, MA P, WANG X