国家/地区 中国（7）
IPC部 C（4） H（4）
IPC大类 H01（4） C23（3）
IPC小类 C23C（3） H01G（2） H01L（2）
IPC C23C016/01（2） C23C016/26（2） C23C016/56（2）
H01G011/24（2） H01G011/30（2） H01G011/46（2）
H01G011/86（2） H01L021/336（2）
发明人 MA P（7）
公开年 2015（7）
申请年 2014（4）  2015（3） 
专利权人 INST MICROEL.（4） SHANGHAI INS.（3）

Preparation of three-dimensional graphene/cobalt oxide composite material, involves adding graphene oxide to dispersant, adding divalent cobalt salt with accelerant and soaking graphene/cobalt oxide hydrogel in deionized water.

CHANG X, CHU L, HAN S, HE Z, HUANG Q, LIN H, LIU F, LIU Y, LI F, MA P, WANG C, XIONG L, ZHOU J, HANG Z, AI Y, WANG X

Preparation of three-dimensional graphene/polyaniline/cobalt oxide composite material for electrode material, involves adding divalent cobalt salt and graphene oxide to crude product of graphene oxide/polyaniline and reacting mixture.

CHANG X, CHU L, HE Z, HUANG Q, JIANG J, LIN H, LIU F, LIU Y, LI F, MA P, WANG C, XIONG L, ZHOU J, WANG J, HANG Z, AI Y, WANG X

Graphene oxide nickel phosphorus composite plating liquid used for providing steel alloy surface with composite plating layer includes nickel sulfate, sodium hypophosphite, sodium acetate, citric acid, lactic acid and composite stabilizer.

DONG B, GONG W, HAN S, LIU F, WU H, DONG H, CHU L, MA P, HUANG Q, HANG Z, CHEN Y, JIANG S

Method for nondestructively transferring graphene from metal surface to surface of target substrate e.g. glass substrate, involves transferring prepared polymethyl methacrylate/graphene composite film to surface of target substrate.

JIN Z, MA P, WANG X, ZHANG D, SHI J

Forming copper metal surface on substrate by using chemical vapor deposition, involves growing graphene on surface of copper foil and copper electrolyte agar gel, glassy carbon sheet, graphite, conductive glass or indium tin oxide.

JIN Z, MA P, WANG X, ZHANG D, SHI J

Graphene FET device manufacturing method, involves depositing passivation protection layer using selective etching of passivation protecting layer above grid medium layer, and depositing metal forming source on drain metal electrode.

JIN Z, MA P, WANG X, ZHANG D, WANG S, SHI J

Method for aligning graphene for top gate FET device, involves coating metal on source electrode and drain electrode, and connecting graphene top gate FET device body with electric conduction channel and source and drain electrodes.

JIN Z, MA P, WANG X, ZHANG D, WANG S, SHI J