国家/地区 韩国（3）
IPC部 B（3） C（3） H（2）
IPC大类 B82（3） C01（3） B32（2）
H01（2）
IPC小类 C01B（3） B32B（2） B82B（2）
B82Y（2） H01L（2）
IPC C01B031/02（3） C01B031/04（3） B32B005/00（2）
B82B003/00（2）
发明人 MILLER S（3）
公开年 2013（3）
申请年 2012（2） 
专利权人 EMPIRE TECHNOLOGY DEV LLC（3）

Partially altering defect area in a layer on substrate involves reacting substrate under reaction conditions to produce cationic area in exposed areas; adhering graphene oxide to cationic area to produce graphene oxide layer; and reducing.

MILLER S, YAGER T, MILLER S A, YAGER T A

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Detecting defect in graphene sample involves exposing sample having graphene and some defects, to gas under specific condition, removing gas, placing obtained marked sample in detector system, and detecting marks bonded to defects in sample.

MILLER S A, MILLER S