国家/地区 中国（5）
IPC部 C（5） B（4） H（2）
IPC大类 C01（5） B82（3） B32（2）
H01（2）
IPC小类 C01B（5） B32B（2） B82Y（2）
IPC C01B031/02（4） C01B031/04（4） B82Y040/00（2）
C01B032/186（2） C01B032/194（2）
发明人 NA D（5）
公开年 2012（2） 2014（2）
申请年 2011（2）  2013（2） 
专利权人 HANWHA TECHW.（5） SAMSUNG TECH.（5） HANWHA AEROS.（3）

Manufacturing graphene film involves preparing catalyst metal having at least surface on which graphene is formed, forming support layer on graphene, and isolating graphene and support layer from catalyst metal.

NA D, LEE E, YOON J, NA D H, LEE E K, YOON J H, LI Y

Graphene for electronic equipment e.g. display device, battery, photoelectric device and solar cell, contains nitrogen-containing organic compound.

NA D H, PARK E S, RYU J C, WON D K, CHEOL R J, NA D, WON D, PARK E, RYU J, YUAN D, YOO J H, LIM Y M, HUH Y

Copper-based thin metal film useful for a catalytic metal for synthesizing graphene, comprises silver.

YOON J, NA D, SONG Y, WON D, YOON J H, NA D H, SONG Y I, WON D K, YUAN D

Graphene transferring method involves compressing catalyst metal film and substrate film using initial roller, and separating substrate film from metal film.

NA D, YOON J, SONG Y, WON D, NA D H, YOON J H, SONG Y I, WON D K, YUAN D

Post-treating method of graphene used for e.g. biosensor, involves forming metal thin film on graphene, disposing liquid phase carrier on graphene, hardening carrier, and separating carrier and graphene from metal thin film.

WON D, CHO S, YOON J, NA D, WON D K, CHO S M, YOON J H, NA D H, YUAN D