国家/地区 韩国（5） 美国（3） 中国（2） 世界知识产权组织（2）
IPC部 C（5） H（4） B（3）
IPC大类 C01（5） H01（4） B82（3）
B05（2） B32（2）
IPC小类 C01B（5） H01B（3） B05D（2）
B32B（2） B82Y（2）
IPC C01B031/02（4） H01B001/04（3） B32B037/10（2）
B82Y030/00（2） B82Y040/00（2） C01B031/04（2）
发明人 NA D H（5）
公开年 2012（4）
申请年 2011（5）
专利权人 SAMSUNG TECH.（5） HANWHA TECHW.（4）

Method used for attaining graphene, involves forming graphene on catalyst metal, forming supporter, removing catalyst metal by wet etching using etchant, exposing graphene and transferring exposed graphene.

NA D H, YOON J H

Graphene transfer involves forming graphene on both sides of metallic catalyst component, arranging carrier in graphene, exposing graphene, removing catalyst component from exposed portion, and transferring graphene to substrate.

NA D H, YOON J H

Fabricating multi-layered graphene, by disposing a first graphene layer on a carrier, disposing a second graphene layer on the first graphene layer to form a graphene sheet, transferring the graphene sheet, and removing the carrier.

HONG B, KIM N, NA D, SONG Y, WON D, YOON J, HONG B H, NA D H, SONG Y I, WON D K, YOON J H, KIM N Y

Graphene transferring method involves compressing catalyst metal film and substrate film using initial roller, and separating substrate film from metal film.

NA D, YOON J, SONG Y, WON D, NA D H, YOON J H, SONG Y I, WON D K, YUAN D

Post-treating method of graphene used for e.g. biosensor, involves forming metal thin film on graphene, disposing liquid phase carrier on graphene, hardening carrier, and separating carrier and graphene from metal thin film.

WON D, CHO S, YOON J, NA D, WON D K, CHO S M, YOON J H, NA D H, YUAN D