国家/地区 中国（3）
IPC部 G（2）
IPC大类 G01（2）
IPC小类 G01L（2）
IPC G01L001/18（2）
发明人 OH S（3）
公开年 2018（3）
申请年 2017（2） 
专利权人 UNIV NORTH C.（3）

Method for packaging graphene high-temperature pressure sensor, involves taking graphene pressure sensor with high temperature package overall structure, where graphene pressure sensor comprises casing, base and substrate.

LI M, WANG J, LI D, ZHAO S, OH S, WANG L

Graphene-based pressure sensor of piezoresistive structure comprises a package housing, where the upper and lower ends of package housing are respectively provided with a ceramic substrate and a substrate.

LI M, OH S, ZHAO S, WANG L, WANG J, WANG G

Graphene-based piezoresistive structure for pressure sensor, has composite electrode connected with graphene/boron nitride/boron nitride nanometre film, where graphene/boron nitride/boron nitride nanotube film is separated from outside air.

LI M, OH S, ZHAO S, WANG L, WANG J, WANG G