国家/地区 美国（5）
IPC部 C（4） H（3）
IPC大类 C23（3） H01（3） C01（2）
IPC小类 C23C（3） C01B（2） H01L（2）
IPC C23C016/26（3） C23C016/46（2） H01L021/02（2）
发明人 OH S（5）
公开年 2023（2）
申请年 2022（2） 
专利权人 SAMSUNG ELEC.（2）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Substrate processing apparatus for manufacturing semiconductor device, comprises substrate support to support multiple substrates such that substrates are on substrate support, chamber sidewall surrounding side surface of substrate support, and upper plate having plate portions on substrate support.

OH S, AN S, LEE J, JEONG G, JUNG K O, LEE J H, AHN S J, OH S R

Device for applying dielectrophoretic force on particle, has electrodes that are arranged close to one another and channel such that application of sufficient voltage across electrodes are configured to generate electric field in channel.

KOESTER S J, OH S

Composition for electrochemical half-cell used for fuel cell, and catalytic reactor comprises graphene and organic moieties.

SURENDRANATH Y, FUKUSHIMA T, OREILLY M E, OH S, MURRAY A T, KAMINSKY C J, CHU S B, JACKSON M N

Manufacture of graphene used for e.g. touch screen, involves forming transition metal catalyst layer on substrate, supplying carbon source vapor to chamber and segregating graphene from carbon component in catalyst-layer surface.

JEON S, LEE J, OH S